I-V characteristics model for Carbon Nanotube Field Effect Transistors
نویسندگان
چکیده
The performance of carbon nanotube-based transistor is analyzed. The effect of geometrical parameters on the device performance is investigated as d tunnel. We have studied the influence of the material parameters, such as the height of the SB (ΦSB), and some other physical parameters like the nanotube chirality, the gate oxide thickness and the gate oxide dielectric permittivity Our results show clearly that device characteristics can be optimized by appropriately selecting geometrical and physical parameters. Index Term-CNTFET, Schottky barrier, modeling.
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